 Solution

For a clean, adiabatically connected GaAs channel at low temperature and small bias, opening successive spin-degenerate subbands givesConductance therefore shows a staircase of plateaux, rather than the continuously geometry-dependent classical Ohmic result. Each fully transmitted mode contributes approximately $77.5\mu \mathrm{S}$. More positive, or less negative, depletion-gate voltage opens a conventional GaAs constriction; more negative voltage closes it.

Require subband spacings larger than thermal and bias broadening and a mean free path exceeding the constriction length. The general Landauer formula is $G=(e^2/h){\sum }_{\alpha }{T}_{\alpha }$ with each spin/valley channel counted separately. A material with additional valley degeneracy need not have the same step sequence as GaAs, and imperfect transmission or contact resistance blurs the ideal plateaux.