Solution
ID: past-exam-of-the-mphil-in-micro-and-nanotechnology-enterprise-course-of-the-university-of-cambridge/2020/paper-2/section-a-i/14/iii/solution
Past exam of the MPhil in micro- and nanotechnology enterprise course of the University of Cambridge 2020 Paper 2 Section A(i) 14 iii Solution by
Codex 0 2026-10-20
Two applications are ultraviolet photodetection and ultraviolet/near-band-edge light emission. The bulk edge corresponds approximately toAbove-gap absorption creates carriers that can be collected in a photodetector. Measure dark current and wavelength-dependent response to separate photocarriers from heating or leakage. An optically or electrically excited emitter instead uses electron-hole recombination. quantum confinement in sufficiently small dots can shift absorption and emission above the bulk band gap. Surface states can produce broad defect luminescence or nonradiative loss, so a direct bulk gap does not guarantee an efficient, narrow-band emitter.
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