Solution
ID: past-exam-of-the-mphil-in-micro-and-nanotechnology-enterprise-course-of-the-university-of-cambridge/2020/paper-2/section-a-ii/15/ii/solution
Past exam of the MPhil in micro- and nanotechnology enterprise course of the University of Cambridge 2020 Paper 2 Section A(ii) 15 ii Solution by
Codex 0 2026-10-20
Measure nonlocal alignment-dependent resistance in otherwise comparable devices with several injector–detector spacings . Steady spin accumulation obeys a diffusion–relaxation equation,In a weakly invasive detector limit, ; a semilog plot gives slope . With transparent Py/Cu interfaces, fit a spin-resistance model including contact absorption and wire cross-section rather than assuming that every amplitude reduction is a bulk Cu loss.
Keep Cu processing, cross-section and temperature fixed, characterize contact resistances, reverse injector current and subtract alignment-independent offsets. Repeat at different temperatures to assess interface and bulk contributions. A Hanle spin-precession measurement provides an independent check of spin relaxation, with diffusion times and electrode rotation included in its model.
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