 Solution

Absorption of photons with $h\nu \gtrsim E_g$ creates electron-hole pairs, the upward band-diagram arrow. In the depletion region the built-in field drives electrons towards n material and holes towards p material; diffusion also delivers carriers generated within a diffusion length outside that region. Selective contacts collect the two signs. Illumination maintains a nonequilibrium quasi-Fermi-level splitting, allowing a voltage and useful current through an external load; it is the light, rather than the equilibrium barrier, that supplies the energy.

Taking forward diode current as positive, an ideal illuminated junction haspower is delivered where $VI<0$ in this convention. Reflection, below-gap transmission, carrier thermalization, recombination and resistive losses limit real conversion; even an ideal single junction has radiative detailed-balance limits.^[ref]