 Solution

An ideal diffusion-dominated p-n junction obeys the Shockley diode equationwith diode ideality factor $\eta =1$ in the simplest model. Forward bias gives exponential current growth; reverse bias gives a nearly constant $-I_s$ until diode reverse breakdown, outside this ideal expression.

For a long abrupt p-n junction in low carrier injection, the diode saturation current isHere $\mathcal{A}$ is area, $N_D,N_A$ are ionized dopant densities, and $D,L$ are minority-carrier diffusion coefficients and diffusion lengths in the appropriate regions. At each temperature, extract $I_s$ either from the reverse-saturation plateau below breakdown or from a forward exponential fit using its measured diode ideality factor.

Extracting a semiconductor band gap from diode saturation current requires correcting for the transport prefactor:A plot against $1/T$ has slope $-E_g/k_B$ when the gap and effective masses are nearly temperature-independent. Alternatively divide the measured $I_s$ by a known $C(T)$ to recover the full $n_i^2(T)$. The prefactor cannot generally be assumed constant over an arbitrarily broad range. Junction-generation or recombination-dominated current can scale as $n_i$ instead, so the diffusion regime should be identified from the current-voltage behaviour.