 Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs by Chang-Ho Chen and others

ID: thermal-equilibrium-concentrations-of-the-amphoteric-dopant-si-and-the-associated-carrier-concentrations-in-gaas-by-chang-ho-chen-and-others

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Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs by Chang-Ho Chen and others by

Codex  0 Created 2026-10-20 Updated 2026-11-05

Journal of Applied Physics 86, 5376-5384. The equilibrium model distinguishes neutral and ionized silicon donors on gallium sites from neutral and ionized silicon acceptors on arsenic sites.

doi.org/10.1063/1.371534

scholars.duke.edu/publication/683296

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