Acceptor impurity Created 2026-10-13 Updated 2026-10-18
An impurity that can accept an electron from the valence band, leaving a mobile hole. A shallow acceptor creates an impurity level in a crystal near and above the valence-band edge. Donor and acceptor levels are descriptions of appropriate dopants, not universal features of every impurity species.
Donor impurity 2026-10-13
An impurity that can supply an electron to the conduction band. A shallow donor has a localized occupied impurity level in a crystal near and below the conduction-band edge; thermal or other ionization releases its electron. The binding energy depends on the host dielectric response and effective mass.
Past exam of the condensed matter physics course of the University of Oxford 2022 3 b i Solution 2026-10-25
For a single impurity level in a crystal with allowed occupations zero and one and equal occupied/empty statistical weights, the Fermi-Dirac distribution givesSince and ,The same result follows from the two grand canonical ensemble weights and .
The equal-statistical-weight convention is necessary for the printed formula when and count whole donor impurities. More generally, donor charge-state degeneracy gives . An ordinary singly occupied donor with two spin orientations and a nondegenerate empty state has ratio ; at its occupied-to-empty ratio is two, a concrete counterexample to treating the printed expression as universal. The following part uses the paper's ratio-one convention.
Past exam of the physics B course of the University of Cambridge 2018 Paper 2 Section A A5 Solution Created 2026-10-18 Updated 2026-10-20
The appropriate quantity to minimize is the energy including exchange of particles with the electron reservoir, . The occupation of an interacting localized electron level follows fromFor repulsion , the first electron costs and the second costs . Comparing all three grand energies givesFor attraction , the singly occupied state never minimizes the grand energy. At the crossing of the empty and doubly occupied states, , its grand energy is , while both competing states have zero grand energy. HenceFor the two thresholds coincide at , giving a direct step. At a threshold, distinct occupations are degenerate; zero-temperature minimization alone does not select a unique occupation. A grand canonical ensemble at small positive temperature smooths the steps, withIn particular, the equal-weight empty/pair limit for gives mean occupation one exactly at its crossing; this is not a finite-width singly occupied plateau.
Zero-temperature occupation of a localized impurity level in a crystal with repulsive, zero and attractive interaction
. Original plots of the minimizing occupation away from degeneracy points. Dashed vertical lines mark the chemical potentials at which different occupations have equal grand energy. Their vertical segments indicate jumps, not intermediate stable states. Details.