Introduction of dopants by accelerating ions into a solid. Their depth distribution, lattice damage and electrical activation depend on implantation and subsequent annealing.
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Ion implantation is a technique used in materials science and semiconductor manufacturing to introduce impurities, or dopants, into a solid substrate, typically silicon or other semiconductor materials. The process involves the following key steps: 1. **Ion Generation**: Ions of the desired dopant material (such as boron, phosphorus, or arsenic) are created using an ion source. These dopants can alter the electrical properties of the semiconductor.