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Sulfur substituting for phosphorus acts as a donor impurity, giving n-type semiconductor behaviour and usually increasing electrical conductivity. A P site normally supplies five valence electrons; S supplies six. After forming the surrounding bonds, the extra electron can occupy a donor level below the conduction band and be thermally ionized into that band. The donor impurity then carries positive charge.

This assignment is supported experimentally: infrared transmission measurements on S-doped gallium phosphide resolved bound-donor transitions and determined a sulfur donor optical ionization energy of about $0.104\mathrm{eV}$, far smaller than the host band gap.^[ref]

The effect depends on substitution on P sites, donor ionization, compensation by acceptors and charge carrier mobility. A dilute active donor population increases the electron term in $\sigma =e(n{\mu }_n+p{\mu }_p)$; not every dopant must donate a mobile electron at room temperature. Sulfur's larger Allen electronegativity does not overturn this electron-counting argument or make a P-site sulfur atom an acceptor.