Sphere-plane capacitance ($C(R,h)$)

For a conducting sphere of radius $R$ at center height $h>R$ above a grounded infinite plane,The distance $h$ is measured to the center, so the surface gap is $h-R$. Relative to the capacitance of an isolated conducting sphere, the enhancement is $c(R/h)=C(R,h)/(4\pi ϵR)$.

The method of images gives a constructive proof. At fixed sphere potential $V_s$, start with $q_0=4\pi ϵR{V}_s$ at height $z_0=h$ and place its opposite image below the plane. Cancel that image's nonconstant sphere potential by the successive chargeswith opposite mirror charges below the plane at every step. The resulting sphere potential is $V_s$ and the plane potential is zero. Since $q_n=4\pi ϵR{V}_s\sinh \alpha /\sinh ((n+1)\alpha )$, summing the sphere charges gives the displayed capacitance. In particular $c(y)=1+y/2+O(y^2)$ for small $y$.

The exact sphere-plane boundary-value problem is also treated in Behunin and colleagues' analysis of sphere-plane electrostatics.