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A researcher in spintronics whose review with Daniel Lacour relates electrical resistance to the magnetic configuration of layered devices. A magnetic tunnel junction consists of two magnetic conductors separated by a thin insulating barrier; quantum tunnelling through the barrier depends on the electronic states available for each electron spin. This produces tunnelling magnetoresistance, illustrating how the magnetic state of a device can be read through an electrical measurement.^[ref]

A physicist responsible for magnetism, materials and spintronics research at INRiM in 2023.^[ref]

Spintronics uses electron spin and spin-dependent transport in electronic materials and devices. In a magnetic multilayer, the relative magnetization directions can change resistance because electrons of different spin scatter differently. Giant magnetoresistance and tunnel magnetoresistance turn this dependence into electrical readout. Spin accumulation instead describes a nonequilibrium imbalance of spin populations. The field connects quantum angular momentum to transport and information storage; spin polarization need not imply that the entire material is a permanent magnet.^[ref]