 Solution

Diffuse a donor such as phosphorus into the textured p-type surface, then control the thermal drive-in to form the shallow n-type emitter. A phosphorus-containing vapour source can supply the donor over the exposed area. Diffusion and activation create an n-on-p p-n junction; remove the phosphorus-rich surface glass and isolate the rear and wafer edges as required to avoid shunts.

An alternative is ion implantation followed by an activation and damage-repair anneal. The diffusion route is particularly convenient for large-area coverage of a textured wafer. The indicated roughly $1\mu \mathrm{m}$ layer is a depth target for process control, not an instruction to grow an undoped film and assume that it becomes n-type.