 Solution

In a p-n junction, diffusion and electron-hole recombination near the contact leave a depletion region of ionized dopants. Its built-in electric field opposes further majority-carrier diffusion. At thermodynamic equilibrium drift and diffusion currents cancel. Forward bias lowers the electrostatic barrier and injects electrons and electron holes across the junction; reverse bias raises the barrier and suppresses that majority-carrier injection. For an ideal diode below breakdown,Thus a modest forward voltage gives a rapidly increasing current, whereas reverse current remains approximately $-I_s$. This asymmetric current-voltage relation makes the junction a rectifier. Real leakage, electron-hole recombination and breakdown limit the ideal expression.