Linearly graded junction capacitance ($C/A={\epsilon }_s/w$)

For a linearly graded p-n junction, the signed p-side depletion charge per area is $Q_p=-e\alpha w^2/8$. Differentiating with respect to positive p-side voltage $V$, using the linearly graded junction depletion width, gives the positive differential junction capacitance per areaThus $C_A^{-3}$ is linear in $V$. If stored charge denotes the positive n-side magnitude $Q_n=-Q_p$, its derivative with respect to $V$ is negative; the positive capacitance is instead $-d{Q}_n/dV=d{Q}_n/d{V}_R$ for reverse-voltage magnitude $V_R=-V$. Neither definition uses the zero net charge of the whole depletion layer.