Masahiro Kito contributed to establishing p-type semiconductor behavior in magnesium-doped gallium nitride. Hiroshi Amano's account credits Kito with Hall effect measurements after low-energy electron beam treatment, providing stronger evidence for the conduction type than the initial hot-probe test.[ref]
Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low Energy Electron Beam Irradiation by Hiroshi Amano. §V, pp. 1135–1136: sample growth with Kito and his Hall-effect measurement; acknowledgments, p. 1137, print Masahiro Kito in full.
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