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Giant magnetoresistance connects the relative magnetizations of adjacent magnetic layers to their electrical transport. In a suitable magnetic-metal/nonmagnetic-metal stack, aligning the layers can leave one spin channel with an easy conducting path through both magnetic layers; opposite alignments make each channel encounter a more resistive layer. Albert Fert's account traces the spin-dependent-conduction idea to Nevill Mott and distinguishes the later device geometries.^[ref]

The beauty is that a magnetic arrangement becomes an electrical readout. Preparing reproducible layers, establishing their magnetizations, and measuring electrical resistance are separate parts of that inference. The Fe-Cr giant magnetoresistance experiments show how those parts were joined; the two-current resistor model isolates a simple transport mechanism under stated assumptions.

A device with a reference magnetic layer whose magnetization is comparatively fixed and another layer whose magnetization responds more readily to an applied field. The resistance reads their relative alignment. Fert's account describes how such giant magnetoresistance sensors entered hard-disk read heads in 1997.^[ref]