A device with a reference magnetic layer whose magnetization is comparatively fixed and another layer whose magnetization responds more readily to an applied field. The resistance reads their relative alignment. Fert's account describes how such giant magnetoresistance sensors entered hard-disk read heads in 1997.[ref]
Nobel Lecture: Origin, development, and future of spintronics by Albert Fert. p.1519, spin-valve structure and historical read-head adoption
A spin valve detects a small field by rotating a free layer relative to a pinned magnetic reference. The chain rule separates transport angular response from the magnetic rotational susceptibility. An angular response proportional to has zero slope at perfect parallel and antiparallel alignment but a nonzero slope near perpendicular alignment. The smallest detectable field also depends on electronic and magnetic noise, thermal stability, hysteresis and the chosen bias current; a large magnetoresistance ratio alone does not determine sensitivity.
Fluctuations that limit the detectable field of a magnetoresistive read sensor. Thermal magnetization noise, domain jumps, electronic thermal noise and resistance fluctuations compete with the field-dependent signal; magnetic bias and adequate anisotropy stability are important.
A spin valve with two ferromagnetic layers of different magnetic coercivities, allowing separate reversal without requiring one layer to be rigidly exchange-pinned. A continuous weakly coupling spacer permits a controllable antiparallel state.
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A spin valve is a type of device that exploits the phenomenon of spin-dependent electrical resistance, which is related to the spin of electrons. It consists generally of two ferromagnetic layers separated by a non-magnetic metal or semiconductor layer. The key principle behind a spin valve is that the electrical resistance of the device changes depending on the relative magnetization orientations of the two ferromagnetic layers.
Basic component in spintronics, used in both giant magnetoresistance