Band filling counts occupied one-particle states in an energy band. With spin degeneracy two, a crystal of primitive unit cells has states in each orbital-derived energy band, as in state counting in a Bloch band. Full occupation therefore means two electrons per primitive cell in that band.
In the group velocity approximation, a fully occupied band contributes current densityThe integral vanishes because is periodic across opposite faces of the Brillouin zone; inversion symmetry is unnecessary.[ref] A partially occupied band leaves nearby empty states available for ordinary longitudinal conduction. A filled set of bands with a positive band gap instead gives a band insulator at zero temperature.
The vanishing group velocity term does not exclude every electrical response. A filled Chern insulator band can have a transverse quantum Hall effect governed by Berry curvature.[ref]
Lectures on the Quantum Hall Effect by David Tong. Sections 2.3.1–2.3.2, printed pp. 61–66, TKNN formula and filled-band Chern insulator
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