 Direct-gap semiconductor gain condition

For a vertical optical transition between parabolic energy bands with common carrier temperature, net stimulated emission has occupation factor $f_c(E_c)-f_v(E_v)$. The monotonic Fermi-Dirac distribution makes this positive exactly when the quasi-Fermi-level splitting exceeds the transition photon energy. An allowed transition must also lie above the band gap. Broadening, band degeneracy and a zero-temperature occupation window require their own qualifications; this condition alone does not establish laser threshold.