 Solution

A double heterostructure laser sandwiches a narrow-band gap active layer between wider-band gap cladding layers. In a type-I band alignment, the conduction band edge is lower and the valence band edge higher in the active layer. Electrons therefore see an energy well, and electron holes also see a well because their excitation energy increases when the valence band edge decreases. Both carrier populations remain concentrated where stimulated emission occurs.

The active layer also normally has the higher refractive index, forming an optical waveguide. The optical normal mode overlaps the injected carriers strongly, and the wider-band gap cladding has less interband absorption at the emitted photon energy. Carrier confinement reduces leakage, while optical confinement reduces the required pump current and hence heating.

Writing $\Gamma$ for the fraction of the optical normal mode overlapping the active layer, the threshold condition is $\Gamma g={\alpha }_i+{\alpha }_m$, with internal and mirror losses ${\alpha }_i,{\alpha }_m$. A larger overlap and a higher carrier number density at a given current both lower the threshold current. The figure shows composition-induced offsets; a working junction also has band bending under bias, which is omitted to make the confinement mechanism visible.