 Solution

Oxygen-plasma ashing, preferably a remote or downstream arrangement when low damage matters, removes organic photoresist chemically. Feed oxygen through a plasma source energized by radiofrequency or microwave power. Electron-impact dissociation generates reactive oxygen species; neutral radicals reach the wafer in a separate downstream region. Keep the wafer off a strongly biased driven electrode so energetic ion bombardment is much smaller than in directional reactive-ion etching. A barrel asher with shielded wafers is another chemical-stripping implementation.These equations represent radical production and an ideal complete-oxidation balance; actual exhaust can also contain CO and fragments. Pumping removes volatile products. Directional shape fidelity is unnecessary for blanket stripping, while access around surface relief and high chemical removal selectivity are useful. Monitor endpoint and wafer temperature, and verify removal with a witness surface. oxygen can oxidize exposed materials, charging can still damage sensitive structures, and inorganic or metal-containing residues may require a compatible separate clean. Ashing removes organic contamination; it is not a universal residue-removal step.^[ref]