By William Shockley in 1948 also at Bell Labs Murray Hill.
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A bipolar junction transistor has two p-n junctions sharing a thin base region, arranged n-p-n or p-n-p. In its forward amplification regime, the emitter junction injects minority carriers; many cross the base before electron-hole recombination and reach the reverse-biased collector junction.[ref]
Transistor technology evokes new physics by William Shockley. Printed pp. 368–370, Figs. 11–12
A Bipolar Junction Transistor (BJT) is a type of transistor that uses both electron and hole charge carriers. It is a fundamental component in electronic devices and has three regions of semiconductor material, which are respectively called the emitter, base, and collector. The operation of a BJT is based on the principle of controlling a large current through the collector-emitter path with a smaller current at the base-emitter junction.