The depletion approximation replaces the junction's transition region by a region without mobile carriers, leaving only fixed ionized dopants. For a uniformly doped abrupt p-n junction, on the p side, on the n side and outside. Charge neutrality gives . Integrating Poisson equation gives the electric field and the electrostatic band bending.
For a planar abrupt p-n junction with ionized densities , p-side width and n-side width , zero external field requires . Integrating Poisson equation gives , with positive denoting forward bias. Therefore has the displayed value, and . The positive depletion capacitance per area is . It equals when and are signed space charges per area. Differentiating a positive charge magnitude with respect to forward voltage instead gives a negative derivative. The square-root law assumes partially depleted regions, negligible mobile charge and no substantial injected-carrier storage.
For a zero-bias abrupt p-n junction, choose the p side at and the n side at . Ionized acceptors and donors remain fixed while mobile Electrons and electron holes diffuse and establish a built-in electric field. In the depletion approximation, mobile carriers are neglected on and the net charge density isCharge neutrality gives . The quasi-neutral bulk can have a large mobile carrier density while its net charge density is nearly zero, because fixed dopant charge compensates it. With complete ionization and nondegenerate carriers, equilibrium also gives ; real carrier profiles vary smoothly rather than forming exact step functions at depletion edges.
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