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The positive hole mobility is the magnitude of an electron hole's weak-field drift velocity per unit electric field. In an isotropic relaxation-time model, ${\mu }_h=e{\tau }_h/m_h^{\ast }$, and its contribution to electrical conductivity is $ep{\mu }_h$. The sign is opposite to an electron's drift because the electron hole has positive charge.

Heating promotes electrons across the band gap, creating mobile conduction electrons and electron holes. Their contributions add:where $u_e,u_h$ are the electron mobility and hole mobility, and $e$ is the positive elementary-charge magnitude. The increase in carrier density gives the rising electrical conductivity in the intrinsic activation regime. Mobility need not itself increase with temperature; the model attributes the dominant increase to carrier generation.

With equal constant electron mobility and hole mobility $\mathcal{M}$, the sheet electrical conductivity is $\sigma =e\mathcal{M}(n+p)$. In the intrinsic regime, $n+p\simeq 2n_i\propto T{e}^{-E_g/(2k_{B}T)}$, soIt decreases steeply with increasing $1/T$ on the high-temperature side. There is a small logarithmic curvature rather than a perfectly straight activation line.

In the fully ionized extrinsic regime, charge neutrality and the semiconductor mass-action law give $n-p=n_d$, $np=n_i^2$, henceThis gives a nearly horizontal region passing through $\sigma (200\mathrm{K})=0.01{\Omega }^{-1}$. At lower temperatures semiconductor carrier freeze-out decreases the ionized donor density and bends the curve downward again.

To locate that bend realistically, include donor charge-state degeneracy. For a neutral donor with two spin states and an empty donor with one state, the ionized density isSolve $n-n_i^2/n=n_d^{+}$ for the mobile density. In the asymptotic freeze-out regime, where $p$ is negligible and $n\ll n_d$,Its activation scale $E_B/2\simeq 3.14\mathrm{meV}$ is much smaller than the intrinsic scale $E_g/2=180\mathrm{meV}$.

Within the specified interval the low-temperature downturn is modest: $N_c(30\mathrm{K})\simeq 2.81\times 10^{10}{\mathrm{cm}}^{-2}$, and the partial-ionization equation gives $n(30\mathrm{K})\simeq 0.65n_d$. The sample is not yet deep in the asymptotic freeze-out limit at 30 K. Calibrating the mobility to the stated 200 K value gives representative valuesThe donor statistical weights were not explicitly supplied, so they are a stated assumption for these illustrative curve details; a one-state donor approximation changes the low-temperature rounding but not the three physical regimes or their activation scales.

Charge carrier mobility measures weak-field drift speed per electric field. For electrons and electron holes,Both mobilities are positive, with SI units ${\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$; the opposite drift signs reflect the opposite carrier charges. In a simple isotropic relaxation-time model, electron mobility is ${\mu }_e=e{\tau }_e/m_e^{\ast }$ and hole mobility is ${\mu }_h=e{\tau }_h/m_h^{\ast }$. These are momentum relaxation times, not the minority carrier lifetime for electron-hole recombination.

Scattering by phonons, ionized impurities and defects limits mobility. Increasing phonon populations commonly lowers mobility at high temperature; ionized-impurity scattering can dominate at low temperature and high semiconductor doping. Approximate addition of independent inverse relaxation times is the Matthiessen's rule. At sufficiently strong field, velocity saturation invalidates the constant-mobility drift law.

The Hall effect provides a measurement: a current-carrying bar in a perpendicular magnetic field develops a transverse voltage. In a one-carrier model $|R_H|=1/(en)$ and $\mu =\sigma |R_H|$, combining the transverse voltage with longitudinal electrical conductivity. Multiple carrier types and scattering-dependent Hall factors require a more detailed interpretation.