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Use a patterned resist or hard mask and anisotropic chlorine-based reactive-ion etching, for example an appropriate $\mathrm{C}{\mathrm{l}}_2/BC{\mathrm{l}}_3$ inductively coupled plasma process for GaAs/AlGaAs. Ion-assisted removal gives a well-defined mesa with less lateral undercut than an isotropic wet etch. Control etch time or endpoint to obtain the specified approximately $1.2\mu \mathrm{m}$ depth.

The mask must survive the etch and protect the active aperture. Control ion damage and sidewall roughness, remove residues and passivate the sidewall where required. Compatibility with the metal stack determines whether the mesa is etched before or after front-contact deposition.