An experimental physicist who, with Chithra H. Sharma, demonstrated electrostatic confinement of electron flow in a molybdenum disulfide device insulated by hexagonal boron nitride. A pair of gates narrowed the conducting path, while a back gate controlled carrier concentration. The apparatus allowed the transition from an open channel toward quantum tunnelling through a constriction to be studied electrically.[ref]
Split-gated point-contact in MoS2-hBN structures by Chithra H. Sharma and Madhu Thalakulam. Abstract and pp. 1–2: split gates, back gate and transport regimes
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