A researcher who coauthored a gate-controlled point-contact experiment with Madhu Thalakulam. The device stacked molybdenum disulfide and hexagonal boron nitride, with patterned electrodes controlling a narrow electron channel. Measurements between 4 and 300 kelvin traced how gate voltage changed the electrical conductance, providing a route toward controllable circuits in layered semiconductors.[ref]
Split-gated point-contact in MoS2-hBN structures by Chithra H. Sharma and Madhu Thalakulam. Abstract and experimental section: structure, temperature range and pinch-off measurements
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