Two applications are ultraviolet photodetection and ultraviolet/near-band-edge light emission. The bulk edge corresponds approximately to
(1)
Above-gap absorption creates carriers that can be collected in a photodetector. Measure dark current and wavelength-dependent response to separate photocarriers from heating or leakage. An optically or electrically excited emitter instead uses electron-hole recombination. quantum confinement in sufficiently small dots can shift absorption and emission above the bulk band gap. Surface states can produce broad defect luminescence or nonradiative loss, so a direct bulk gap does not guarantee an efficient, narrow-band emitter.

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