CCD clocked charge transfer 2026-10-18
For an Electron packet, a sufficiently positive gate electric potential attracts Electrons beneath the insulating layer of a MOS capacitor. The corresponding potential energy is , where is the magnitude of elementary charge: a larger electric potential gives a deeper potential well for Electrons. A drawing of potential energy must therefore reverse the vertical sense of a drawing of electric potential.
A simplified three-phase transfer raises the adjacent gate's electric potential before lowering the old holding gate. This overlaps the accessible regions, then leaves the packet under the new gate. Repeat with the next gate to move it forward. Isolated wells with an intervening barrier would store the packet without transferring it.[ref]
Charge Coupled Semiconductor Devices by Willard Sterling Boyle and George Elwood Smith. Boyle and Smith, 1970, p. 587, neighboring capacitors and manipulated electrode potentials
CCD clocked charge transfer and cumulative charge-transfer efficiency
. Original explanatory potential energy profiles show storage, overlap and arrival, with lower curves meaning more attractive regions for Electrons. These are qualitative effective profiles, not measured voltages or prototype wiring. The right panel calculates the main-packet fraction for the stipulated constant-efficiency model; charge absent from that packet may be deferred or truly lost. Details. Past exam of the physics A course of the University of Cambridge 2022 Paper 1 Section A 1 Solution 2026-10-18
Let the infinite outer walls be at , the finite steps at , and the three potential energy values be . The original drawing specifies the orderingThe energy eigenstates can be chosen real. The Dirichlet boundary conditions are ; wavefunction matching at a finite potential step requires both and to be continuous at . In particular, neither finite step acts as an additional hard wall.
The Time-independent Schrödinger equation givesThus a wavefunction is sinusoidal in a classically allowed region, with wavenumber , and a linear combination of exponential functions in a classically forbidden region, with inverse decay length . Its curvature changes sign relative to at a step crossing ; its slope does not jump.
By the Sturm oscillation theorem, the three energy eigenstates have exactly zero, one, and two interior nodes, respectively. Choose their global phases so that their slopes at the left wall are positive:
- : a positive lobe in the left-hand potential well, followed by a nonoscillatory tail through the barrier and right-hand region. The tail reaches zero at the right wall. There are no interior nodes.
- : two lobes of opposite sign in the left-hand potential well, with one interior node, followed by a nonoscillatory tail of the sign of the second lobe. Both the middle and right regions are classically forbidden regions.
- : sinusoidal behavior in both outer regions, joined through the nonoscillatory barrier. There are two interior nodes in total. The right-hand wavelength is longer than the left-hand wavelength, because .
For , the right-hand piece is proportional to , rather than a pure decaying exponential: this enforces the finite-distance hard wall exactly. The barrier pieces likewise contain both exponential solutions. Their small tails are an instance of quantum tunnelling.
This is an original illustrative calculation, with vertical lines marking only the region boundaries. It uses , , , , , , and in arbitrary energy units. Its lowest energy eigenvalues are approximately , so it has exactly the required ordering. Here both nodes of the third wavefunction happen to lie towards the left; its dominant lobe is on the right. These precise positions and relative amplitudes are illustrative: the original drawing supplies no numerical lengths, barrier heights, or mass, so it does not determine a unique quantitative wavefunction. The required sketch features are the matching, curvature, hard-wall zeros, and ordered node counts.

