Shuji Nakamura is an electrical engineer whose work helped make efficient blue light-emitting diodes possible using gallium nitride and indium gallium nitride. His work combined improved material growth, activation of p-type semiconductor and the design of an emitting active layer.[ref]
One crucial result concerned hydrogen binding to magnesium acceptor impurities in gallium nitride. The resulting complexes suppress their electrical activity; thermal treatment can remove that passivation. In an emitting semiconductor heterostructure, injected electrons and holes recombine in an active layer with a smaller band gap than the surrounding material, helping confine the carriers where light is produced. This connects material chemistry with an operating electronic device.[ref]
Background story of the invention of efficient blue InGaN light emitting diodes by Shuji Nakamura. Introduction, figure 1; section III, Mg-H passivation
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Portrait of Shuji Nakamura
. Glenn Beltz. CC BY 2.0, via Wikimedia Commons. Source._(2).jpg){kind=link}
- Background story of the invention of efficient blue InGaN light emitting diodes by Shuji Nakamura
- Candela-class high-brightness InGaN⁄AlGaN double-heterostructure blue-light-emitting diodes by Shuji Nakamura and others
- Hole Compensation Mechanism of P-Type GaN Films by Shuji Nakamura and others
- Thermal Annealing Effects on P-Type Mg-Doped GaN Films by Shuji Nakamura and others
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