A self-assembled InAs quantum-dot single-photon source uses small indium arsenide islands inside a larger-gap gallium arsenide host. Strain during epitaxial growth favors islands after a thin wetting layer has formed. Their characteristic diameter is of order – and their height a few nanometres, for example –. Growth conditions determine the areal density: low-density samples suitable for isolating dots can be around –, while ordinary dense layers can be much denser. The particular electrically driven device underlying the supplied image had about . These are characteristic scales, not dimensions deducible from the emission image.[ref]
Quantum confinement in the dot traps both Electrons and electron holes in three directions, giving discrete energy levels. In a junction device, injected carriers relax into these levels. Electron-hole recombination then emits a photon, and the dot must be repopulated before emitting again on that same transition. Spatial selection of one dot, spectral selection of one line, and well-separated injection pulses make this a single-photon source. Photon antibunching, rather than low average brightness alone, establishes suppression of simultaneous photons. In particular, collecting both photons of a cascade without selecting a line would not produce exactly one collected photon per excitation.
The lower-current feature is the transition from one confined exciton to the empty dot. The higher-current feature is the first step of the biexciton cascade : it becomes strong when the dot can contain two electron-hole pairs. In the weak-pumping limit the probabilities of one and two pairs scale approximately as and , respectively. Coulomb and confinement energies shift the two transitions relative to one another; is not a photon of twice the energy. In this particular image the photon is about – higher in energy. With , this is a negative biexciton binding energy, since .
For the mass estimate, the original plot places the line at approximately , with graph-reading precision of order . Under the prescribed identification of photon energy with the full lowest exciton excitation energy,
The three-dimensional screened Wannier-Mott exciton has the hydrogenic exciton binding energy
Therefore
Reading the line as instead gives ; about – is an appropriate precision. This inference uses the supplied pair-creation energy and a three-dimensional screened hydrogenic model. In a real dot, strain and confinement also alter transition energies, so it is an effective model estimate and does not independently determine either individual carrier mass.
A quantum dot of InAs embedded in gallium arsenide confines injected Electrons and electron holes. Strain-driven island formation supplies dots with lateral dimensions of order tens of nanometres and heights of a few nanometres. In an electrically driven implementation, a dot lies in a junction's intrinsic region. Selecting one dot spatially and one radiative line spectrally turns discrete exciton recombination into a single-photon source. Pulsed injection must avoid re-excitation during the same collection window.
The pioneering electrically driven device used an areal dot density around , a GaAs p-i-n structure and an aperture selecting individual-dot light.[ref]
Single-photon source 2026-10-18
A single-photon source prepares light with strongly suppressed simultaneous two-photon emission. One useful implementation repeatedly excites one discrete emitter and collects a selected radiative transition. Photon antibunching, measured through the zero-delay second-order correlation , tests the multiphoton suppression; a weak coherent beam retains Poissonian number fluctuations. Collection efficiency and multiphoton probability are distinct properties.