Stress imaging of Si microfabricated structures by HORIBA

Official manufacturer application documentation. Section Stress distribution analysis using Raman images illustrates stress mapping in shallow trenches near the active-zone edge of microfabricated silicon and discusses a linear correlation between applied silicon stress and Raman peak shift. This is a material-specific measurement application, not a universal conversion from Raman shift to an isolated bond force constant. No personal byline or publication date is asserted.