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The 1988 study grew alternating iron/chromium layers by molecular beam epitaxy on gallium arsenide. Magnetization and torque measurements tested the magnetic configuration. An AC electrical resistance measurement passed electric current along the layers while the applied magnetic field changed. Comparing field directions and spacer thicknesses linked the resistance decrease to magnetic saturation. Electron microscopy and surface analysis checked layer formation, while leaving atomic-scale interface roughness unresolved.^[ref]

The independent Jülich study used four-terminal sensing on epitaxial Fe/Cr/Fe strips. A single iron film supplied an anisotropic magnetoresistance comparison. Magneto-optic Kerr effect signals and Brillouin light scattering from spin waves identified the layer alignments, rather than inferring them from resistance alone. Field scans along different magnetic axes connected the optical signatures to the resistance changes.^[ref]

Peter Andreas Grünberg's retrospective explains why the preceding interlayer exchange coupling measurements mattered: coupled spin wave modes supplied signatures of magnetic alignment before that alignment became an electrical signal.^[ref]

A resistance curve alone does not reveal the microscopic direction of every magnetic layer. The optical measurements add a different observable, while the reference film tests an orientation-dependent response that can occur without a multilayer. Sample preparation and cross-checks therefore belong to the physical explanation.

Combining the two results gives the GMR ratio for identical thickness-averaged layers:Thus a field that aligns initially antiparallel moments produces a resistance decrease. One spin channel conducts well throughout the aligned stack; in the antiparallel stack both channels sample strong scattering. For the low-resistance-state normalization,Normalizing the field-induced drop by $R_{AP}$ instead gives $(a-b{)}^2/(a+b{)}^2$. Large channel contrast can produce a large giant magnetoresistance; equal channels give none, and common nonmagnetic scattering dilutes the contrast. This is the spin-dependent alignment effect, distinct from anisotropic magnetoresistance of an individual magnetic layer.

Sweep the in-plane magnetic field approximately along the wires' easy axes. At large negative field, both magnetizations are parallel. If the wires reverse at different positive coercive fields, an antiparallel interval separates this state from the final parallel positive-field state. In the usual positive giant magnetoresistance case, the antiparallel interval has higher resistance; the reverse sweep gives a mirrored interval and a hysteresis loop.

An ideal angular model isSpin-dependent injection and scattering favor transmission through similarly aligned electrodes. The two-current resistor model represents this using unequal majority- and minority-spin resistances. Both layers can reverse, hence pseudo spin valve, rather than an absolutely pinned reference layer.

The different thicknesses can produce different switching properties, but thickness alone does not identify which electrode reverses first. Measure their coercive fields. The local resistance also contains Cu, contact and Py anisotropic magnetoresistance contributions. Rotation scans and individual-wire controls distinguish them. Py/Cu experiments showed that local contact-related signals can exceed the spin-valve contribution, motivating nonlocal detection.^[ref]