Carrier densities with chemical potential pinned to a band edge

For equal-mass conduction and valence edges at $0,-E_g$ and fixed $\mu =0$, $n=N(T)F_{1/2}(0)$ and $p=N(T)F_{1/2}[-E_g/(k_{B}T)]$, where $N(T)=2[m{k}_{B}T/(2\pi {\hslash }^2){]}^{3/2}$. Other states pinning the chemical potential can compensate the unequal carrier charges; imposing intrinsic charge neutrality in addition would change the problem.