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Incoming links: CCD clocked charge transfer
CCD clocked charge transfer 2026-10-18
For an Electron packet, a sufficiently positive gate electric potential attracts Electrons beneath the insulating layer of a MOS capacitor. The corresponding potential energy is , where is the magnitude of elementary charge: a larger electric potential gives a deeper potential well for Electrons. A drawing of potential energy must therefore reverse the vertical sense of a drawing of electric potential.
A simplified three-phase transfer raises the adjacent gate's electric potential before lowering the old holding gate. This overlaps the accessible regions, then leaves the packet under the new gate. Repeat with the next gate to move it forward. Isolated wells with an intervening barrier would store the packet without transferring it.[ref]
Charge Coupled Semiconductor Devices by Willard Sterling Boyle and George Elwood Smith. Boyle and Smith, 1970, p. 587, neighboring capacitors and manipulated electrode potentials
CCD clocked charge transfer and cumulative charge-transfer efficiency
. Original explanatory potential energy profiles show storage, overlap and arrival, with lower curves meaning more attractive regions for Electrons. These are qualitative effective profiles, not measured voltages or prototype wiring. The right panel calculates the main-packet fraction for the stipulated constant-efficiency model; charge absent from that packet may be deferred or truly lost. Details.