The chemical element with atomic number 14. Oxygen burning produces silicon-group nuclei; subsequent silicon burning is a reaction network approaching an iron-group mixture.
Polycrystalline silicon, containing many crystalline grains. Deposited polysilicon can form structural layers in surface micromachining; grain structure, doping and residual stress influence its properties.
Ancestors (4)
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- Amphoteric dopant
- ASCA Technical Description: SIS by NASA HEASARC
- BABAR time-dependent CP violation experiment
- CDMS experiment
- Deep reactive-ion etching
- Deferred charge in CCD readout
- Desilylation
- Diffraction contrast
- Diode characteristic measurement
- Fano-limited X-ray CCD energy resolution
- Fluoride
- Glass network former
- Graphene exfoliation and field-effect experiments
- Higgs boson discovery in 2012
- Inductive Barkhausen experiment
- Integrated circuit interconnect
- Kilby integrated circuit demonstration
- Lossless two-channel thickness scattering model
- Martinis-Devoret-Clarke circuit experiments
- Neutron-rich magnesium shell-closure test
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- Periodic table
- Photodiode responsivity measurement
- Photometric calibration
- Polysilicon
- Seebeck coefficient
- Semiconductor transport evidence for localization
- Silanone
- Silicon-29 nuclear magnetic resonance
- Silsesquioxane
- Silyl enol ether
- Silyl ether
- Solar limb-darkening drift-scan experiment
- T10 silsesquioxane cage
- T7 trisilanol cage
- T8 silsesquioxane cage
- Transmission electron microscopy specimen dose and calibration
- University of Florida HCl and DCl FTIR experiment
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