Leo Esaki's 1958 report describes alloy-fabricated germanium p-n junctions, with acceptor impurity concentration and donor impurity concentration approximately . Its readout was the current-voltage characteristic: a forward peak occurred at . The report says specimens could be reproduced; above the forward branch approximately followed the ordinary Shockley diode equation.[ref]
In his 1973 lecture, Leo Esaki recalls an earlier junction whose strong room-temperature reverse conduction preceded a negative-slope forward segment revealed by cooling. Its estimated zero-bias width was about ångströms (), supported by capacitance measurements. Increasing semiconductor doping further made the negative slope visible across the measured temperatures, including room temperature. Thus preparation and temperature variation were experimental controls, not merely changes to a theoretical diagram. The low onset voltage argued against avalanche production of Electrons and electron holes; the energy band explanation connected the forward decline to loss of available final states.[ref]
The historical readouts were junction electric current versus applied electric potential difference and a separate capacitance check; preparation and temperature were varied. The cited descriptions do not identify a meter model or give a complete wiring diagram.
For a modern repetition, measure junction voltage directly while stepping the supply and recording electric current, repeat both sweep directions, and compare temperatures and differently doped specimens. These are proposed controls, not a reconstruction of the historical apparatus. Lead electrical resistance, Joule heating, contact quality and voltage resolution can obscure the result. The tunnel-diode load-line stability calculation also predicts that an external resistor can make a negative-slope operating point inaccessible in a slow sweep. A jump in terminal readings then need not mean the underlying current-voltage characteristic is discontinuous.

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