A coauthor of a study examining how widely the Mott criterion applies to the metal-insulator transition. The criterion compares a characteristic electronic length with the spacing implied by the carrier concentration. The paper discusses both doped semiconductors and strongly interacting compounds, emphasizing that the same compact relation must be interpreted in the physical setting of each material.[ref]
The Mott criterion: So simple and yet so complex by Alexander Pergament and others. Abstract: applications beyond heavily doped semiconductors
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