There are three useful temperature regimes.
At low temperature, dopant freeze-out keeps most donor electrons bound. Warming ionizes donors and increases conductivity through the rising mobile-electron concentration. For an uncompensated dilute donor system, negligible holes and spin degeneracy two, charge neutrality with partial donor ionization gives
Deep in freeze-out, , so
The activation scale is set by the shallow donor binding, rather than the whole band gap.
In the extrinsic regime, donors are largely ionized and is nearly constant. The temperature dependence of conductivity then mainly follows the electron mobility. Increasing phonon scattering can make conductivity fall as temperature rises, even though donors remain ionized; impurity scattering can give a different mobility trend at lower temperature.
At sufficiently high temperature, thermally generated electron–hole pairs overwhelm the dopant population. The intrinsic, gap-activated increase in conductivity returns. The boundaries depend on donor concentration, compensation and scattering, so no one exponential describes the entire doped-sample curve.

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