Gallium has three valence electrons, one fewer than silicon, and acts as an acceptor impurity. A neutral acceptor can be described as a negatively charged centre binding an electron hole. Thermal release of these holes gives a p-type semiconductor.
At low temperature, the bound hole can absorb far-IR photons in transitions between acceptor levels. The simplest scalar hydrogenic acceptor state model predicts
so one expects a discrete bound-hole absorption series followed by a photoionization continuum. In that idealization, the first lines would be at , and , with threshold .
The hole effective mass is not supplied, so the electron mass cannot be reused to give numerical Ga line positions. In a real valence band, multiple hole bands, anisotropic masses and spin-orbit effects can split and complicate the series; acceptor spectra are generally less accurately described by one scalar hydrogenic ladder.[ref]

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