Using and an ideal band-edge photon energy equal to the quoted gap,At low temperature an electron and hole can form a bound exciton. Its recombination releases approximately , so its wavelength is longer than evaluated using the gap at that same temperature. GaN excitation and emission measurements resolve such excitonic transitions below the fundamental gap.[ref]
Fundamental energy gap of GaN from photoluminescence excitation spectra by Bo Monemar. Photoluminescence-excitation, reflection and emission comparison; separation of exciton transition energy from the fundamental gap
For the quoted cubic-phase gap,The same exciton binding argument can shift the actual emission to longer wavelength; impurity-bound transitions can also lie below the fundamental gap. The comparison must use at the operating temperature. Ordinary temperature-dependent gap changes can shift the band edge in the opposite direction, so the numerical values based on fixed supplied gaps are not universal lower bounds for every cooled device.
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