Past exam of the MPhil in micro- and nanotechnology enterprise course of the University of Cambridge / 2017 / Paper 1 / Section B / 9 / ii / Solution

Treat the letter-shaped regions as openings to be etched, using positive-tone resist; the clear mask areas therefore correspond to those openings. Label the two L features $L_1,L_2$ from left to right. An alternating assignment is mask A: H, $L_1$, O; mask B: E, $L_2$. Each full letter remains on one mask, avoiding unnecessary stitch boundaries across its stems. Nearest-neighbor interletter gaps now occur between different exposures, rather than having to be resolved within one exposure. Verify that each individual letter's internal spaces are still printable; without dimensions, this partition is a process proposal rather than proof of a particular numerical minimum linewidth.

A robust sequence is litho-etch-litho-etch double patterning into a durable hard mask. Deposit an oxide hard mask on silicon; expose and develop mask A and transfer those openings through the hard mask. Strip resist, apply fresh resist, align and expose mask B, then transfer its openings into the same hard mask, the second resist covering mask-A openings during that second oxide transfer. Remove resist and perform one final deep silicon etch through the union of the openings. An inductively coupled deep reactive-ion etching process with alternating fluorine etching and sidewall passivation gives much more vertical, high-aspect-ratio features than an isotropic etch. Mask thickness and etch selectivity must survive the required depth. Control sidewall scalloping, aspect-ratio-dependent etch rate, charging, microloading and the combined overlay/etch-bias budget.

A spacer-based process can produce very fine regular pitches, but arbitrary letter junctions and terminations require additional cut/block patterning; it is not automatically a two-mask solution for this target. Use two independently transferred sparse masks, then a selective directional deep etch. The schematic gives the assignment and a generic corner-correction example without reproducing the supplied pattern.