Past exam of the MPhil in micro- and nanotechnology enterprise course of the University of Cambridge / 2019 / Paper 1 / Section A(i) / 1 / iii / d

Conventional semiconductor scanning capacitance microscopy is not a reliable dopant-contrast image of this specimen as drawn. Its usual $dC/dV$ signal relies on a tip–insulator–semiconductor capacitance whose depletion region changes under AC bias. An isolated conducting graphene sheet on thick insulating glass provides neither that conventional depletion geometry nor a controlled charge reservoir; simply earthing glass does not supply one. Capacitive or electrostatic contrast may be detectable with a suitably designed back electrode, a contacted flake and an appropriate capacitance-sensitive instrument, but that is an additional electrical device specification. Force-based surface topography remains possible independently of the specialized capacitance channel.