Past exam of the MPhil in micro- and nanotechnology enterprise course of the University of Cambridge / 2020 / Paper 2 / Section A(ii) / 15 / ii

Measure nonlocal alignment-dependent resistance in otherwise comparable devices with several injector–detector spacings $L$. Steady spin accumulation obeys a diffusion–relaxation equation,In a weakly invasive detector limit, $\Delta R_{\mathrm{NL}}=(V_P-V_{AP})/I\propto e^{-L/{\lambda }_s}$; a semilog plot gives slope $-1/{\lambda }_s$. With transparent Py/Cu interfaces, fit a spin-resistance model including contact absorption and wire cross-section rather than assuming that every amplitude reduction is a bulk Cu loss.

Keep Cu processing, cross-section and temperature fixed, characterize contact resistances, reverse injector current and subtract alignment-independent offsets. Repeat at different temperatures to assess interface and bulk contributions. A Hanle spin-precession measurement provides an independent check of spin relaxation, with diffusion times and electrode rotation included in its model.