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Morton B. Panish helped develop semiconductor lasers using a double heterostructure. A narrow-gap active layer between wider-gap semiconductor layers confines injected charge carriers and guides the emitted light. This combined electronic and optical confinement lowered the threshold sufficiently for continuous operation at room temperature.^[ref]

A chemist who developed semiconductor lasers at Bell Laboratories.^[ref]

Zhores Alferov developed double heterostructure semiconductor devices that confine carriers in a narrow active region. Different band gaps inhibit carrier escape, while refractive-index contrast can guide the optical field through the same region. Bringing carriers and light together increases useful gain and reduces the current needed for laser operation. His account connects the heterostructure concept with practical semiconductor lasers and other electronic and optoelectronic devices.^[ref]

A physicist who studied semiconductor heterostructures at the Ioffe institute.^[ref]