Surface state

A surface state is an electronic state localized near a material boundary. Its occupation can store electric charge and change the near-surface electric potential, producing band bending.

Walter Houser Brattain's surface studies combined changes of contact potential under light, electrical conductivity, and transient response to distinguish surface effects from bulk properties. His Nobel lecture distinguishes fast and slow charge responses and warns that slow behavior can involve the surrounding gas rather than a simple electronic state.^[ref]

Spatial variation of the valence band and conduction band edges associated with a varying electric potential. Near a semiconductor boundary it can deplete mobile charge carriers or create a semiconductor inversion layer.

A near-surface region whose predominant mobile charge carrier species is opposite to that in the interior: for example a layer rich in electron holes on an n-type semiconductor.

For an ideal MOSFET with a nondegenerate p-type semiconductor of acceptor density $N_A$, define ${\varphi }_F=(k_{B}T/e)\ln (N_A/n_i)>0$, where $n_i$ is the intrinsic carrier concentration. A positive surface electric potential ${\psi }_s$ lowers the local conduction band and valence band by $e{\psi }_s$. The surface Electron density is $n_s=(n_i^2/N_A)\exp (e{\psi }_s/k_{B}T)$. Equality $n_s=N_A$ gives the conventional onset of strong inversion at ${\psi }_s=2{\varphi }_F$. The earlier crossover $n_s=p_s=n_i$ occurs at ${\psi }_s={\varphi }_F$. Neither condition requires the Fermi level to enter the conduction band.