Electron beam lithography

Direct pattern writing by a scanned electron beam in an electron-sensitive photoresist.

Unintended exposure near a written feature caused by electron scattering in the resist and substrate. The deposited-energy distribution is broader than the incident probe, requiring dose or geometry correction for dense and isolated patterns.

Small-angle scattering that broadens an incident electron probe as it travels through resist.

Adjustment of exposure dose or shape to compensate for energy deposited outside the intended write location.