Electron beam lithography

Direct pattern writing by a scanned electron beam in an electron-sensitive photoresist.

Unintended exposure near a written feature caused by electron scattering in the resist and substrate. The deposited-energy distribution is broader than the incident probe, requiring dose or geometry correction for dense and isolated patterns.

Nonlocal dose deposition that changes developed features through scattering and neighboring exposures.

Small-angle scattering that broadens an incident electron probe as it travels through resist.

Adjustment of exposure dose or shape to compensate for energy deposited outside the intended write location.