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An emission-limited thermionic current is set by the rate at which the heated surface supplies Electrons, with nearly complete collection. At fixed temperature, increasing the attracting electric potential difference then produces an approximate collection plateau. That plateau is the useful regime for fitting the Richardson-Dushman law, provided the electric field has not significantly lowered the surface barrier.

The emitting surface still matters in this regime. Adsorption changes the work function; different crystal faces can have different barriers. Heating may desorb contaminants or change a coating, so repeated measurements at the same temperature need not agree unless the surface preparation is controlled. For fixed $A,T$, a barrier change $\Delta W$ multiplies $J$ by $e^{-\Delta W/(k_{B}T)}$. In the chosen model at $1000\mathrm{K}$, raising the barrier by $0.10\mathrm{eV}$ reduces $J$ to about 0.313 of its previous value.

The Richardson-Dushman law models the magnitude of emitted electric current density asHere $T$ is absolute thermodynamic temperature, $W$ is the work function, $k_B$ is the Boltzmann constant, and $A$ is the Thermionic Richardson constant. The signed electric current density points opposite to the outgoing Electron motion; $J$ here is positive. For uniform emission over area $S$, the emitted electric current magnitude is $I=SJ$.

The Richardson-Dushman law assumes an emitter close to thermal equilibrium, a surface with a well-defined and approximately constant work function over the fitted temperature range, and predominantly thermal escape over the barrier. Interpreting a measured collector electric current with this law additionally requires an emission-limited thermionic current, known emitting area, and negligible return emission from the collector. Strong electric fields can lower the surface barrier or enable quantum tunnelling; then this zero-field expression is insufficient.

For a deliberately chosen teaching model, take $W=2.0\mathrm{eV}$ and $A=120\mathrm{A}\mathrm{c}{\mathrm{m}}^{-2}{\mathrm{K}}^{-2}$, expressing the barrier in electronvolts. These are illustrative parameters, not measured properties of a named material. Using $k_B=8.617333262\times 10^{-5}\mathrm{eV}{\mathrm{K}}^{-1}$, at $1000\mathrm{K}$ the Boltzmann factor is about $8.33\times 10^{-11}$, yetA 20 percent increase in temperature raises the predicted electric current density by about 69 times. For a chosen emitting area $S=0.010\mathrm{c}{\mathrm{m}}^2$, these correspond to approximately $0.100\mathrm{mA}$ and $6.89\mathrm{mA}$ if collection is complete. The small escaping fraction is replenished by the external electrical circuit.

The sensitivity is especially clear from the logarithmic derivative at fixed $A,W$:In the chosen model at $1000\mathrm{K}$, a $1\mathrm{K}$ rise changes $J$ by about 2.5 percent to first order. Accurate temperature measurement matters even when electric current measurement is easy.

A space-charge-limited thermionic current occurs when the negative space charge of emitted Electrons creates an electric field that obstructs further transport across the gap. Raising the emitter temperature may then increase the surface supply without producing the corresponding collector electric current. The gap geometry and collecting electric potential difference matter even when the surface is stable.

To distinguish this from an emission-limited thermionic current, vary the collecting electric potential difference at fixed emitter temperature, then repeat at another temperature. A voltage-dependent transport region followed by a collection plateau separates a gap constraint from a supply constraint. A weak collector electric current alone cannot establish a high work function. Nor does simply choosing a very large collecting electric potential difference guarantee a valid zero-field measurement: the surface barrier may then change.