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A GaAs–AlGaAs semiconductor heterostructure confines electrons normal to the interface in a semiconductor quantum well. Remote modulation doping supplies a high-mobility two-dimensional electron gas. Negative split gates deplete it laterally, leaving a narrow quantum point contact with discrete transverse subbands and continuous longitudinal momentum. A single occupied subband requires transverse excitation gaps larger than thermal and applied-bias energies.

Take $e>0$ and count one spin-resolved channel. In a length $L$, right-moving states have density $Ldk/(2\pi )$; each contributes charge current $-e{v}_k/L$. ThusThe second expression is the right reservoir's left-moving contribution expressed in the same left-to-right conventional-current sign. Since $v_{k}dk=dE/\hslash$,The limit needs $k_{B}T,|eV|\ll \mu -E_0$ and ballistic transport. Velocity cancels the one-dimensional state density. Two degenerate spin channels give $2e^2/h$, not an extra factor hidden in the quoted single-channel result.

For elastic phase-coherent scattering, expand each incident flux-normalized mode in outgoing lead modes. Its transmitted fraction is $|(t_E{)}_{nm}{|}^2$; sum over all open outgoing $n$ and occupied incident $m$. Linearizing the reservoir occupations gives the Landauer formulaThe source's $T_E^{+}$ denotes this amplitude matrix, not temperature or a probability matrix. Flux normalization is essential: ordinary wave-amplitude ratios need a velocity factor. Reservoirs equilibrate, contacts supply incoming Fermi distributions, and inelastic processes within the channel are neglected. Spin is included among channel labels. At $T\to 0$, only transmissions at $\mu$ contribute; perfect channels each add one quantum. This is a two-terminal conductance including contact resistance, even with no internal backscattering.

Trace I has steps near integer $2e^2/h$ as less-negative gate voltage opens successive spin-degenerate subbands. At the printed parallel field $11\mathrm{T}$, Zeeman splitting separates the two spin thresholds, allowing approximately half-sized steps in the plotted units; the onset also shifts. Thermal broadening, imperfect transmission and unresolved thresholds round the plateaux. A parallel field primarily resolves spin in the ideal thin-interface model; finite layer thickness can also shift subband energies. The plot alone does not determine a unique effective $g$ factor or microscopic disorder model.

A gallium arsenide/aluminium gallium arsenide semiconductor heterostructure combines lower-gap GaAs with a higher-gap AlGaAs barrier. In a modulation-doped design, AlGaAs donors supply electrons to lower conduction-band states on the GaAs side. An undoped spacer separates the channel from ionized donors and reduces impurity scattering. The interface barrier and band bending quantize motion normal to the interface while allowing in-plane motion: a two-dimensional electron gas.

The normal confining potential is commonly triangular and finite rather than an infinite square well. At suitable density and low temperature, only the lowest normal subband is occupied. modulation doping reduces an important scattering source; it does not eliminate all disorder.

Use negatively biased surface gates to deplete the surrounding electron gas and leave a rectangular central region. Gate voltage controls lateral dimensions and barrier heights. Two constrictions can weakly couple the region to reservoirs, with a plunger gate controlling population. Etched boundaries are possible but may introduce edge disorder. A flat interior and steep edges approximate a box, givingFringing fields, finite barriers and penetration change the ideal result. A 2DEG confines only the normal direction; gates supply the extra lateral confinement. Gate-dependent spectroscopy can test level spacings, while charging measurements separate orbital confinement from Coulomb blockade.

A gallium arsenide/aluminium gallium arsenide heterojunction has a conduction-band offset that can confine electrons on the GaAs side. Donors in the wider-gap AlGaAs supply electrons; band bending produces a narrow interfacial potential well. Motion normal to the interface is quantized into subbands, while motion within the plane remains approximately free with GaAs effective mass. Occupying the lowest confinement subband creates a two-dimensional electron gas.

Modulation doping spatially separates the ionized donors from the mobile electrons. An undoped spacer between the donor layer and the channel reduces Coulomb scattering from donor ions while still allowing charge transfer. This can produce higher mobility than doping the conducting channel itself. The spacer thickness balances lower scattering against weaker carrier supply and electrostatic control; interface roughness, alloy disorder, phonons and background impurities can still limit mobility. The channel is a finite-width quantum wavefunction, not a mathematically zero-thickness sheet.

Molecular beam epitaxy is a suitable research-scale choice. Independently controlled elemental beams and shutters allow abrupt composition changes, controlled silicon donor incorporation and thin spacer layers. Growth can proceed sequentially from the GaAs substrate through the undoped GaAs, undoped AlGaAs spacer, doped AlGaAs supply layer and highly doped GaAs cap.

A clean crystalline surface and controlled substrate temperature support epitaxial interfaces; separating the donor layer from the channel is modulation doping. Metalorganic vapor-phase epitaxy can also grow such structures, but MBE's controllable research-scale layer sequence is a strong match to the stated task. Merely depositing the right total elemental amounts would not guarantee the required crystallinity and interface abruptness.