A single two-dimensional quadratic saddle with contributes this leading joint density of states when both contour branches are included and counts independent spin channels. The contour integral is proportional to above the saddle. Its asymptote gives the logarithm with of order . The cutoff-dependent constant is not universal. This is a density per area per energy; changing to a density per frequency requires a Jacobian. [ref]
The joint density of states counts vertical valence-to-conduction transitions at photon energy . Optical absorption weights it by dipole or momentum matrix elements, occupation factors and optical-frequency prefactors. A Van Hove singularity occurs at a stationary transition energy . It can create a strong peak, edge or cusp in an absorption spectrum and thereby reveal electronic band structure. The relevant stationary quantity is the band difference, not necessarily either band separately. Forbidden optical transitions can suppress the feature; excitons, finite lifetimes and disorder can shift or broaden it. A two-dimensional saddle gives a logarithm, whereas a parabolic two-dimensional minimum gives a step. [ref]
Put , and . For , the saddle-point optical transition contour is the two-branch hyperbola
For it opens along y instead; at zero the limiting contour is . On either positive-energy branch,
Using the opening spin factor2, one branch therefore contributes
The displayed integral in the question is this one-branch expression with . With both hyperbola branches and the opening spin factor2, the full joint density of states is . Equivalently, the printed coefficient describes the full two-branch contour if the spin degeneracy is1. The PDF itself has this factor-of-two mismatch; it cannot be removed by reparametrizing the complete contour.
There is also a cutoff qualification. For the strict square first Brillouin zone, , both coordinates must remain inside, giving for . Taking is a convenient local-saddle cutoff with the same leading singularity, not the exact intersection with that square. The quadratic dispersion is only a local band model, so the nonsingular constant depends on how the saddle region joins the actual bands.
For the source's cutoff, the logarithmic two-dimensional saddle joint density of states follows directly:
Thus, in the one-branch normalization of the requested integral,
The strict square cutoff has the same leading logarithm. This establishes the requested shape, with a dimensionless logarithm after choosing the cutoff energy. Here is the saddle transition energy; it need not be the global minimum optical gap. The definition in the question has units of states per area per energy, despite being written as a function of frequency.
Figure 1.
Saddle contours and JDOS
. Source. Details.
For a representative unstrained zinc blende structure III-V semiconductor such as gallium arsenide, take the valence-band maximum at the Gamma point as zero. The near-centre ordering is an s-like conduction band doublet above a p-like valence quartet. Spin-orbit interaction puts the p-like doublet below the quartet by . These are the zone-centre bands of a zinc-blende III-V semiconductor.
The quartet produces the heavy-hole and light-hole bands. Along a chosen symmetry direction, their components have and respectively; their different curvatures define different positive hole effective masses. They are degenerate at zero wavevector in the unstrained cubic crystal, but separate away from it. The doublet is the split-off valence band. To leading isotropic order,
Valence-band curvature is negative for electrons; the corresponding hole masses are positive. Real valence bands warp with direction, so these are illustrative effective-mass parabolas rather than an exact spherical band structure.
The k·p perturbation theory couples the s-like and p-like states through momentum matrix elements. It controls the conduction-band mass, nonparabolicity and mixing of hole characters. Strain or quantum confinement can split the heavy/light degeneracy even at zero in-plane wavevector. The lack of inversion symmetry in zinc blende also permits spin splitting away from the zone centre; time-reversal symmetry still protects the zone-centre doublets.
The s–p electric-dipole transitions near are optically important and produce structures at and with polarization-dependent weights. For direct band gap compounds the conduction minimum is also at , allowing near-edge absorption and emission without a momentum-supplying phonon. Not every III-V compound is direct-gap, and wurtzite materials have an additional crystal-field splitting; the cubic scheme should not be imposed on every III-V semiconductor. [ref]
Figure 1.
Zone-centre III-V bands
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Substitutional arsenic has one more valence electron than germanium, so it acts as a donor impurity. Thermal ionization of its shallow bound state supplies mobile conduction-band electrons and leaves fixed positive donor charge. The resulting n-type semiconductor can have even when only a small fraction of host atoms are replaced. Its electrical conductivity then rises because the mobile carrier count increases; the opposite donor charge preserves macroscopic charge neutrality.
This argument assumes that the donors are substantially ionized at the measurement temperature and that the added impurity scattering does not overwhelm the carrier increase. The screened bound-donor picture and its departures from a simple hydrogenic model are described in institutional semiconductor spectroscopy notes.[ref]
The extra electron is bound to an approximately singly charged donor through a dielectric-screened Coulomb attraction. In the isotropic hydrogenic donor state model, replace the vacuum electron mass by and the vacuum permittivity by :
At low temperature, the donor is mainly in its state. Allowed electric-dipole transitions to states have
Assign the three printed lines to . Their independently inferred binding energies are
They are mutually close, giving . The hydrogenic impurity absorption series accumulates at the donor-ionization limit. Above about , absorption can place the electron in the conduction-band continuum, explaining the continuous spectrum.
Using the supplied and ,
The corresponding effective radius is
These are the parameters inferred from the printed lines within the stipulated scalar model, rather than substituted tabulated material constants. Real impurity spectra can depart from a single hydrogenic ladder through anisotropy and short-distance impurity effects.[ref]
Gallium has three valence electrons, one fewer than silicon, and acts as an acceptor impurity. A neutral acceptor can be described as a negatively charged centre binding an electron hole. Thermal release of these holes gives a p-type semiconductor.
At low temperature, the bound hole can absorb far-IR photons in transitions between acceptor levels. The simplest scalar hydrogenic acceptor state model predicts
so one expects a discrete bound-hole absorption series followed by a photoionization continuum. In that idealization, the first lines would be at , and , with threshold .
The hole effective mass is not supplied, so the electron mass cannot be reused to give numerical Ga line positions. In a real valence band, multiple hole bands, anisotropic masses and spin-orbit effects can split and complicate the series; acceptor spectra are generally less accurately described by one scalar hydrogenic ladder.[ref]